PHOTOTRANSISTORS, METHODS OF MAKING PHOTOTRANSISTORS, AND METHODS OF DETECTING LIGHT

摘要

A phototransistor ( 400 ) comprises an emitter ( 43 ) comprising antimony, a base ( 42 ) comprising antimony, and a collector ( 41 ) comprising antimony. Preferably, the emitter, the base and the collector each comprises at least one of AlInGaAsSb, AlGaAsSb, AlGaSb, GaSb and InGaAsSb. The base comprises an emitter-contacting portion ( 41 b) with a base-contacting portion ( 43 a) of the emitter. The collector comprises a base-contacting portion ( 41 b) which is in contact with a collector-contacting portion ( 421 a) of the base. The phototransistor produces an internal gain upon being contacted with light within a receivable wavelength range, preferably greater than 1.7 micrometers. Also, a method of detecting light using such a phototransistor.