SELECTIVE OXIDATIVE REMOVAL OF A SELF-ASSEMBLED MONOLAYER FOR CONTROLLED NANOFABRICATION

摘要

Improved tip-patterned atomic layer deposition (ALD) is provided by using a scanning probe microscope (SPM) tip to define an oxide pattern in a self-assembled monolayer deposited on a substrate. The oxide pattern can directly define the ALD deposition pattern. Alternatively, the oxide pattern can be removed (e.g., with a chemical etch), and the resulting exposed substrate pattern can be used to define the ALD deposition pattern.