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SELECTIVE FUNCTIONALIZATION OF DOPED GROUP IV SURFACES USING LEWIS ACID / LEWIS BASE INTERACTION
SELECTIVE FUNCTIONALIZATION OF DOPED GROUP IV SURFACES USING LEWIS ACID / LEWIS BASE INTERACTION
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机译:路易斯酸/路易斯碱相互作用对第四族掺杂表面的选择性作用。
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摘要
A method of selectively attaching a capping agent to a Group IV semiconductor surface is disclosed. The method includes providing the Group IV semiconductor surface, the Group IV semiconductor surface including a set of covalently bonded Group IV semiconductor atoms and a set of surface boron atoms. The method also includes exposing the set of boron atoms to a set of capping agents, each capping agent of the set of capping agents having a central atom and a set of functional groups, wherein the central atom includes at least a lone pair of electrons; wherein a complex is formed between at least some surface boron atoms of the set of surface boron atoms and the central atom of at least some capping agents of the set of capping agents.
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