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OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING N-FACE OR M-PLANE GAN SUBSTRATE PREPARED WITH AMMONOTHERMAL GROWTH
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING N-FACE OR M-PLANE GAN SUBSTRATE PREPARED WITH AMMONOTHERMAL GROWTH
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机译:使用N-Face或M-平面GAN底物制备的具有光热生长的光电器件
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摘要
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.
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