首页> 外国专利> FLASH MEMORY SYSTEM SCANNING BAD BLOCK FAST AND BAD BOLCK MANAGING METHOD THEREOF

FLASH MEMORY SYSTEM SCANNING BAD BLOCK FAST AND BAD BOLCK MANAGING METHOD THEREOF

机译:闪存系统扫描坏块快速及其坏块管理方法

摘要

A flash memory system searching the bad block are provided to be capable of searching the information about the bad block of the flash memory device at high speed. A flash memory system searching the bad block comprises the followings: the flash memory device(110) which has the first address period and the second address period, and comprises in order to be exchanged the block address of the bad block belonging to the first address with the block address of the second address period; the memory controller(120) which controls the flash memory device in order to search the bad block information of the memory blocks belonging to the second address and in order to output the selected bad block information.
机译:提供一种搜索坏块的闪存系统,以能够高速搜索关于闪存设备的坏块的信息。一种搜索坏块的闪存系统,包括:具有第一地址周期和第二地址周期的闪存设备(110),其包括为了交换而属于第一地址的坏块的块地址。第二个地址周期的块地址;存储控制器(120),其控制闪存设备以便搜索属于第二地址的存储块的坏块信息,并输出所选择的坏块信息。

著录项

  • 公开/公告号KR20080101951A

    专利类型

  • 公开/公告日2008-11-24

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20070048123

  • 发明设计人 BYEON DAE SEOK;

    申请日2007-05-17

  • 分类号G06F12/14;G06F12;

  • 国家 KR

  • 入库时间 2022-08-21 19:14:39

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