首页> 外国专利> FLASH MEMORY SYSTEM SCANNING BAD BLOCK FAST AND BAD BOLCK MANAGING METHOD THEREOF

FLASH MEMORY SYSTEM SCANNING BAD BLOCK FAST AND BAD BOLCK MANAGING METHOD THEREOF

机译:闪存系统扫描坏块快速及其坏块管理方法

摘要

A memory system according to the present invention includes a flash memory device having a first address section and a second address section, and configured to exchange a block address of a bad block belonging to the first address section with a block address of the second address section; And a memory controller configured to control the flash memory device to retrieve bad block information of memory blocks belonging to the second address period and to output the selected bad block information. Through the above configurations, the flash memory system of the present invention can retrieve the bad block address at high speed.
机译:根据本发明的存储系统包括具有第一地址部分和第二地址部分的闪存设备,并且被配置为将属于第一地址部分的坏块的块地址与第二地址部分的块地址交换。 ;并且,存储控制器被配置为控制闪存设备以检索属于第二地址时段的存储块的坏块信息并输出所选择的坏块信息。通过以上配置,本发明的闪存系统可以高速检索坏块地址。

著录项

  • 公开/公告号KR101091844B1

    专利类型

  • 公开/公告日2011-12-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070048123

  • 发明设计人 변대석;

    申请日2007-05-17

  • 分类号G06F12/14;G06F12;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:02

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