A NOVEL METHOD FOR MONITORING AND CALIBRATING TEMPERATURE IN SEMICONDUCTOR PROCESSING CHAMBERS

摘要

The method for monitoring and correcting the temperature In the semiconductor processing chamber is provided to execute the non destructive method for measuring the temperature of the semiconductor processing chamber under the low temperature. A step is for depositing the taget film on the test board(110). A step is for measuring the property of the target film formed on the test board(120). A step is for positioning the target film the temperature of the processing chamber within the processing chamber(130). The test process is performed in the processing chamber(140). In the completion of the test process, the change of properties of the target film is obtained (150). A step is for determining the temperature of the processing chamber based on the obtained value of properties of the target film(160).