FABRICATION METHOD FOR GALLIUM NITRIDE NANO ROD AND LIGHT EMMITING DEVICE WITH GALLIUM NITRIDE NANO ROD

摘要

A GaN nanorods manufacturing method is provided to manufacture the GaN nanorods having good quality by a simple method without a mask process or a photo lithography process and to reduce whole process time and whole process cost. A GaN nanorods manufacturing method comprises steps of: preparing a base substrate; forming a metal layer at one side of the base substrate; oxidation-heat processing the base substrate and the metal layer and forming a mixed layer including a plurality of nano dots of an oxide layer and the metal layer which locally exists in the oxide layer; forming a gallium nitride film at upper side of the mixed layer; and etching selectively the gallium nitride film. The base substrate is made of Si.