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FABRICATION METHOD FOR GALLIUM NITRIDE NANO ROD AND LIGHT EMMITING DEVICE WITH GALLIUM NITRIDE NANO ROD
FABRICATION METHOD FOR GALLIUM NITRIDE NANO ROD AND LIGHT EMMITING DEVICE WITH GALLIUM NITRIDE NANO ROD
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机译:氮化镓纳米棒的制备方法及氮化镓纳米棒的发光装置
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摘要
A GaN nanorods manufacturing method is provided to manufacture the GaN nanorods having good quality by a simple method without a mask process or a photo lithography process and to reduce whole process time and whole process cost. A GaN nanorods manufacturing method comprises steps of: preparing a base substrate; forming a metal layer at one side of the base substrate; oxidation-heat processing the base substrate and the metal layer and forming a mixed layer including a plurality of nano dots of an oxide layer and the metal layer which locally exists in the oxide layer; forming a gallium nitride film at upper side of the mixed layer; and etching selectively the gallium nitride film. The base substrate is made of Si.
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