POLYSILSESQUIOXANE-BASED ORGANIC-INORGANIC HYBRID GRAFT COPOLYMER, ORGANO-SILANE COMPRISING POROGEN USED FOR PREPARATION OF THE SAME AND METHOD FOR PREPARATION OF INSULATING FILM COMPRISING THE SAME

摘要

A polysilsesquioxane-based organic-inorganic hybrid graft copolymer is provided to easily form nano-size pores and to ensure low dielectric constant, thereby being usefully used as a semiconductor interlayer low dielectric insulating material. An organosilane compound has a structure represented by chemical formula 1 and includes a pore-forming agent. A polysilsesquioxanes-based organic and inorganic mixture graft-copolymer represented by chemical formula 2 is prepared by hydrolysis and condensation polymerization of a silane-based monomer and an organosilane compound. In chemical formula 1 and 2, R1 is C1~C3 alkoxy group or chlorine group; L1 is a linker connecting silane and organic polymer and is oxygen or C2~C11 alkyl group; and P1 is a lactic acid homopolymer with number average molecular weight of 300 or more, a glycolic acid homopolymer or a lactic acid-glycolic acid copolymer.