首页> 外国专利> HIGHLY SENSITIVE AND FAST RESPONDING OXIDE SEMICONDUCTOR-TYPE GAS SENSOR USING HIERARCHICAL STRUCTURE AND FABRICATION METHOD THEREOF

HIGHLY SENSITIVE AND FAST RESPONDING OXIDE SEMICONDUCTOR-TYPE GAS SENSOR USING HIERARCHICAL STRUCTURE AND FABRICATION METHOD THEREOF

机译:分层结构及其制造方法的高灵敏度和快速响应的氧化物半导体型气体传感器

摘要

A semiconductor type gas sensor and a manufacturing method thereof are provided to increase the response speed about the inspection gas through a hierarchical structure of including nano-pore. A semiconductor type gas sensor of high-sensitivity and the high speed reaction using hierarchical structure has a porous nano hierarchical structure. The main component is selected from a group made of SnO2, ZnO, In2O3, WO3, Fe2O3 and TiO2. The manufacturing method of the semiconductor type gas sensor comprises: a step of forming a oxide semiconductor precipitate having nano hierarchical structure by causing hydrothermal synthesis reaction of a metal precursor(S1); a step of washing precipitate and drying in order to obtain the powder(S2); and a step of manufacturing the oxide semiconductor type gas sensor having the porous nano hierarchical structure by processing with the heat after forming a film from the power(S4).
机译:提供一种半导体型气体传感器及其制造方法,以通过包括纳米孔的分级结构来提高关于检查气体的响应速度。使用分级结构的高灵敏度和高速反应的半导体型气体传感器具有多孔的纳米分级结构。主要成分选自由SnO2,ZnO,In2O3,WO3,Fe2O3和TiO2组成的组。半导体型气体传感器的制造方法包括:通过引起金属前体的水热合成反应来形成具有纳米级结构的氧化物半导体沉淀物的步骤。洗涤沉淀物并干燥以获得粉末(S2)的步骤;在由电源形成膜之后,通过加热处理来制造具有多孔纳米级结构的氧化物半导体型气体传感器的步骤(S4)。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号