首页> 外国专利> DIELECTRIC CAP HAVING MATERIAL WITH OPTICAL BAND GAP TO SUBSTANTIALLY BLOCK UV RADIATION DURING CURING TREATMENT, AND RELATED METHODS

DIELECTRIC CAP HAVING MATERIAL WITH OPTICAL BAND GAP TO SUBSTANTIALLY BLOCK UV RADIATION DURING CURING TREATMENT, AND RELATED METHODS

机译:具有光学带隙的介电材料在固化过程中具有基本上阻止紫外线辐射的特性,以及相关方法

摘要

A dielectric cap (100) and related methods are disclosed. In one embodiment, the dielectric cap (100) includes a dielectric material (108) having an optical band gap (e.g., greater than about 3.0 electron-Volts) to substantially block ultraviolet radiation during a curing treatment, and including nitrogen with electron donor, double bond electrons. The dielectric cap (100) exhibits a high modulus and is stable under post ULK UV curing treatments for, for example, copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.;COPYRIGHT KIPO & WIPO 2010
机译:公开了一种介电帽(100)和相关方法。在一实施例中,介电帽(100)包括介电材料(108),该介电材料具有光学带隙(例如,大于约3.0电子伏特)以在固化处理期间基本阻挡紫外线辐射,并且包括具有电子给体的氮,双键电子。介电帽(100)表现出高模量,并且在后ULK UV固化处理后稳定,例如用于铜低k线后端(BEOL)纳米电子器件,从而减少了薄膜和器件的开裂并提高了可靠性。;版权KIPO和WIPO 2010

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