HETERO JUNCTION SEMICONDUCTOR DEVICE APPLYING 3D NANO STRUCTURE BUFFER LAYER, IMPROVING A DEVICE CHARACTERISTIC BY MINIMIZING A DEFECT IN A THIN FILM DUE TO LATTICE MISMATCH

摘要

PURPOSE: A hetero junction semiconductor device applying a 3D nano structure buffer layer is provided to minimize a defect in a thin film by forming the buffer layer between a substrate and a thin film device.;CONSTITUTION: A 3D nano structure made of III-V group compound is interposed between a GaAs substrate or a Si substrate and a device structure. The III-V compound is the compound of one or more selected among the group comprised of AlSb, InSb, GaSb, AlGaSb, InGaSb, AlInSb, Ga(Sb,As), In(Sb,As), Al(Sb,As), AlGaInSb, AlGa(Sb,As) and AlIn(Sb,As). The nano structure is formed by a self-assembling method or electron-beam lithography.;COPYRIGHT KIPO 2010