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Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices

机译:中温缓冲层对MBE生长的GaN薄膜和器件的闪烁噪声特性的影响

摘要

Gallium nitride epitaxial layers were grown by rf-plasma MBE on different buffer layer structures. Type I buffer layer consists of a conventional AlN high-temperature buffer layer (HTBL). Type II buffer layer consists of a GaN intermediate-temperature buffer layer (ITBL) grown on top an AlN HTBL. Measurement of flicker noise in metal–semiconductor–metal (MSM) structures on type II buffer layers exhibited close to two orders of magnitude reduction in the noise level compared to those fabricated on type I buffer structures. This shows that GaN thin films grown with the use of ITBL have significantly lower number of interface traps at the metal–semiconductor interface, which is attributed to be the main cause of the observed improvements in the optical properties of the devices. We also performed systematic studies on hot-electron degradation of the devices through the application of a large voltage bias. The data demonstrate substantial improvement in the hot-electron hardness for devices fabricated on type II buffer layer structures.
机译:氮化镓外延层是通过rf等离子体MBE在不同的缓冲层结构上生长的。 I型缓冲层由常规的AlN高温缓冲层(HTBL)组成。 II型缓冲层由在AlN HTBL顶部生长的GaN中温缓冲层(ITBL)组成。与在I型缓冲结构上制造的相比,在II型缓冲层上的金属-半导体-金属(MSM)结构中测量闪烁噪声显示出噪声水平降低了近两个数量级。这表明,使用ITBL生长的GaN薄膜在金属-半导体界面处的界面陷阱数量明显减少,这是观察到的器件光学性能改善的主要原因。我们还通过施加较大的电压偏置对器件的热电子降解进行了系统的研究。数据表明,在II型缓冲层结构上制造的器件的热电子硬度有了显着提高。

著录项

  • 作者

    Leung BH; Fong WK; Surya C;

  • 作者单位
  • 年度 2003
  • 总页数
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类

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