GROUP III NITRIDE CRYSTAL, AND A SURFACE PROCESSING METHOD THEREOF, A GROUP III NITRIDE LAMINATE, A MANUFACTURING METHOD THEREOF, A GROUP III NITRIDE SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF, CAPABLE OF PREVENTING AN INCLINE OF AN UPPER AND LOWER PATH IN AN EDGE AREA

摘要

PURPOSE: A group III nitride crystal, and a surface processing method thereof, a group III nitride laminate, a manufacturing method thereof, a group III nitride semiconductor device and the manufacturing method thereof are provided to reduce impurity of a crystal surface by removing a hard grain in the crystal after lapping.;CONSTITUTION: A surface of group III nitride crystal is lapped using the hard grain with the higher mohshardness than 7. The lapped surface of the group III nitride crystal is polished using the polishing solution without the grain. The pH of the polishing solution without the grain is between 1 and 6 or 8.5 and A laminate structure is comprised of a Ni layer with the 4 nm and an Au layer with 4 nm as a second electrode(662) on a p type GaN(632). The second electrode is bonded in a conductor(682) with a soldering layer(670). A first electrode(661) and the conductor(681) are bonded with a wire(690).;COPYRIGHT KIPO 2010