Growth of Thin and Thick GaN Films by Solution-coating Seed Layer Formation Process

摘要

A method for growing thin and thick gallium nitrogen films by a solution seed layer formation process is provided to improve features of a crystal thin film and a device and to simplify a manufacturing process of the device by using a Ga containing precursor as a seed layer formation material. Mixing a precursor material containing gallium which easily converted to sulfide less than 600 °C and being easily converted to nitride less than 700 °C with solvent dissolving the precursor material which easily vaporized less than 100 °C not to remain a residual to spin-coat it on a substrate; and growing a GaN thin film and thick film. A derivative having a reaction feature similar to that of Ga(mDTC)3 is used as the precursor material. The solvent is chloroform(CHCl3). In the spin-coating step, the precursor and the solvent have concentration of 0.023~0.116 mol/L, the number of rotations in the spin coating is 1000~1500 rpm, and spin coating time is 30~60 seconds.