首页> 外国专利> DEFECT DELINEATION APPARATUS BY THE ELECTROCHEMICAL CU DECORATION AND DEFECT DELINEATION METHOD USING THE SAME

DEFECT DELINEATION APPARATUS BY THE ELECTROCHEMICAL CU DECORATION AND DEFECT DELINEATION METHOD USING THE SAME

机译:电化学铜装饰缺陷定型仪及采用相同方法的缺陷定型方法

摘要

An apparatus and a method for detecting a wafer defect through electrochemical copper decoration are provided to prevent an oxide layer from being damaged by detecting the defect by using a weak voltage through the adjustment of copper density. An electrolyte(103) for the copper decoration is received in a container(104). A wafer(100) contacts electrolyte in the container. A counter electrode(105) soaks in the electrolyte of the container. The counter electrode is connected to a power source with an ohmic contact layer for supplying the current for the copper decoration. The reference electrode(106) is arranged inside the container to be separated from the counter electrode. The reference electrode becomes the basis for the voltage measurement of the ohmic contact layer.
机译:提供一种用于通过电化学铜装饰来检测晶片缺陷的设备和方法,以通过使用弱电压通过调整铜密度来检测缺陷来防止氧化层受损。用于铜装饰的电解质(103)被容纳在容器(104)中。晶片(100)接触容器中的电解质。反电极(105)浸入容器的电解质中。对电极通过欧姆接触层连接到电源,该欧姆接触层用于为铜装饰提供电流。参比电极(106)布置在容器内部以与反电极分开。参比电极成为欧姆接触层电压测量的基础。

著录项

  • 公开/公告号KR100883028B1

    专利类型

  • 公开/公告日2009-02-09

    原文格式PDF

  • 申请/专利权人 SILTRON INC.;

    申请/专利号KR20070079712

  • 发明设计人 KIM KWANG SALK;HAM HO CHAN;

    申请日2007-08-08

  • 分类号H01L27/08;

  • 国家 KR

  • 入库时间 2022-08-21 19:12:13

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