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DEFECT DELINEATION APPARATUS BY THE ELECTROCHEMICAL CU DECORATION AND DEFECT DELINEATION METHOD USING THE SAME
DEFECT DELINEATION APPARATUS BY THE ELECTROCHEMICAL CU DECORATION AND DEFECT DELINEATION METHOD USING THE SAME
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机译:电化学铜装饰缺陷定型仪及采用相同方法的缺陷定型方法
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摘要
An apparatus and a method for detecting a wafer defect through electrochemical copper decoration are provided to prevent an oxide layer from being damaged by detecting the defect by using a weak voltage through the adjustment of copper density. An electrolyte(103) for the copper decoration is received in a container(104). A wafer(100) contacts electrolyte in the container. A counter electrode(105) soaks in the electrolyte of the container. The counter electrode is connected to a power source with an ohmic contact layer for supplying the current for the copper decoration. The reference electrode(106) is arranged inside the container to be separated from the counter electrode. The reference electrode becomes the basis for the voltage measurement of the ohmic contact layer.
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