Method of measuring the degree of partial coherence in semiconductor lithographic system

摘要

PURPOSE: A method for measuring the degree of partial coherence in a semiconductor lithographic apparatus is provided to be capable of improving the simulation accuracy and trouble shooting. CONSTITUTION: Exposure processing is performed by using an exposing mask. At this time, the exposing mask is provided with a phase shifting lattice pattern(51) at a transmission region of pin-hole shape. That is, by using the phase shifting lattice pattern(51), the degree of partial coherence in the exposure processing is measured. Preferably, the diameter of the pin-hole is 10-1000 micrometer.