FABRICATION OF MULTI-LAYER RESIST STRUCTURES USING PHYSICAL-VAPOR DEPOSITED AMORPHOUS CARBON AND FORMING THIN FILM PATTERN USING THE SAME

摘要

A multilayer resist structure and a method for fabricating a thin film pattern using the same are provided to lower the etching aspect ratio of the lower thin film and increase the etching selectivity of the lower thin film using the PVD amorphous carbon mask. A method for fabricating the thin film pattern comprises the step for laminating the PVD amorphous carbon mask(130) on the lower thin film(120); the step for laminating successively the hard mask on the PVD amorphous carbon mask, the bottom anti-reflective coations(150), and the photoresist pattern(160); the step for etching the bottom anti-reflective layer and the hard mask using the photoresist pattern as the etching mask; the step for etching the PVD amorphous carbon layer using the patterned hard mask as the etching mask; the step for etching the lower thin film using the PVD amorphous carbon layer as the etching mask.