首页>
外国专利>
LIGHT EMITTING DIODE BY USE OF METAL DIFFUSION BONDING TECHNOLOGY AND METHOD OF PRODUCING SUCH LIGHT EMITTING DIODE
LIGHT EMITTING DIODE BY USE OF METAL DIFFUSION BONDING TECHNOLOGY AND METHOD OF PRODUCING SUCH LIGHT EMITTING DIODE
展开▼
机译:利用金属扩散键合技术的发光二极管及制备这种发光二极管的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.
展开▼