A process for the wet chemical thinning of si - layers in the active emitter region of a bipolar transistor

摘要

A process for the wet chemical thinning it is of silicon layers in the active emitter region (7) of a bipolar transistor, characterized in that a, in addition, by means of atomic layer doping in a cover layer (3 and 9; 3 and 8) that are introduced, doping with a thickness of less than 3 nm and etch stop layer (5, 10) for wet chemical etching agent and the etch stop layer (5, 10) is removed with a wet chemical etching agent.