Integrated circuit e.g. logic circuit, for e.g. volatile memory device, manufacturing method, involves forming dopant implantation regions by implanting material e.g. boron, and by performing thermal treatment

摘要

The method involves forming a structured gate stack (5) on a substrate (1) e.g. semiconductor substrate, and forming an amorphous substrate region in the substrate by implanting a material e.g. germanium, silicon, krypton and xenon, into the substrate. A getter material (12) e.g. fluorine, is implanted for forming a getter region inside the region. The region is crystallized by thermal treatment, and dopant implantation regions (23) are formed by implanting another material (13) e.g. boron and by performing the thermal treatment, where the regions extend from a surface (1a) into the substrate. An independent claim is also included for an integrated circuit comprising a getter layer.