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Etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application
Etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application
The etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support for the production of semiconductor, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application. The standard oscillator is used in a frequency of 0.5-4 MHz. The number and arrangement of the standard megasonic oscillator monitoring on a fixture as single or multiple block of the substrate to be processed e.g. silicon plate, photo mask, guiding plate and flat panel excite in the processing medium to be processed over a water passage. The etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support for the production of semiconductor, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application. The standard oscillator is used in a frequency of 0.5-4 MHz. The number and arrangement of the standard megasonic oscillator monitoring on a fixture as single or multiple block of the substrate to be processed e.g. silicon plate, photo mask, guiding plate and flat panel excite in the processing medium to be processed over a water passage as transferring medium. The fixture is movable with the oscillator in the water passage and the substrate to be processed relative to each other in such a way that an area of the substrate uncovered by the oscillator is guidable through back and forth movement or circulation movement so that the whole surface is covered in temporal progress of whole surface. The substrate in the process chamber is horizontally subjected with corresponding process fluid and the megasonic oscillation influences from bottom or top over the water intermediate passage or the substrate in the process chamber is vertically subjected with the corresponding process fluid and the megasonic oscillation influences vertically on substrate surface over the water intermediate passage.
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