首页> 外国专利> Etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application

Etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application

机译:具有兆声支撑的基板的蚀刻,镀锌,清洁和光刻胶显影包括通过冷棒法和雾化器应用的标准兆声振动来进行兆声激发。

摘要

The etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support for the production of semiconductor, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application. The standard oscillator is used in a frequency of 0.5-4 MHz. The number and arrangement of the standard megasonic oscillator monitoring on a fixture as single or multiple block of the substrate to be processed e.g. silicon plate, photo mask, guiding plate and flat panel excite in the processing medium to be processed over a water passage. The etching, galvanizing, cleaning and photoresist developing of a substrate with megasonic support for the production of semiconductor, comprise carrying out megasonic excitation by standard megasonic-oscillation of cool bar- and atomizer application. The standard oscillator is used in a frequency of 0.5-4 MHz. The number and arrangement of the standard megasonic oscillator monitoring on a fixture as single or multiple block of the substrate to be processed e.g. silicon plate, photo mask, guiding plate and flat panel excite in the processing medium to be processed over a water passage as transferring medium. The fixture is movable with the oscillator in the water passage and the substrate to be processed relative to each other in such a way that an area of the substrate uncovered by the oscillator is guidable through back and forth movement or circulation movement so that the whole surface is covered in temporal progress of whole surface. The substrate in the process chamber is horizontally subjected with corresponding process fluid and the megasonic oscillation influences from bottom or top over the water intermediate passage or the substrate in the process chamber is vertically subjected with the corresponding process fluid and the megasonic oscillation influences vertically on substrate surface over the water intermediate passage.
机译:用兆超声载体对基材进行蚀刻,镀锌,清洁和光致抗蚀剂显影以生产半导体,包括通过冷棒法和雾化器应用的标准兆超声振动来进行兆超声激发。标准振荡器的使用频率为0.5-4 MHz。在作为待处理基板的单个或多个块的夹具上监视的标准兆声波振荡器的数量和布置,例如硅板,光掩模,导板和平板会在水道上激发待处理的处理介质。用兆超声载体对基材进行蚀刻,镀锌,清洁和光致抗蚀剂显影以生产半导体,包括通过冷棒法和雾化器应用的标准兆超声振动来进行兆超声激发。标准振荡器的使用频率为0.5-4 MHz。在作为待处理基板的单个或多个块的夹具上监视的标准兆声波振荡器的数量和布置,例如硅板,光掩模,导向板和平板在待通过水通道作为传输介质的处理介质中激发。该固定器可与振荡器一起在水通道中移动,并且待处理的基板彼此相对移动,使得可以通过来回移动或循环移动引导基板未被振荡器覆盖的区域,从而整个表面被整个表面的时间进程覆盖。处理室中的基板水平受到相应的处理流体的作用,并且水中间通道上方或底部的超音速振荡影响,或者处理室中的基板垂直受到相应的处理流体的作用,而超音速振荡对基板的垂直影响水中间通道上方的表面。

著录项

  • 公开/公告号DE102007043563A1

    专利类型

  • 公开/公告日2009-03-19

    原文格式PDF

  • 申请/专利权人 BELL GUIDO;

    申请/专利号DE20071043563

  • 发明设计人 BELL GUIDO;

    申请日2007-09-13

  • 分类号B01J19/10;C23F1/00;C25D5/20;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:36

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