Producing polycrystalline silicon, useful for photovoltaic applications, comprises conducting a gas forming silicon compound by a microstructure apparatus or a micro gap, heating and isolating the polycrystalline silicon from the gas phase

摘要

Process for producing polycrystalline silicon comprises conducting a gas forming chlorinated silane compound (I) through a microstructure apparatus or a micro gap and heated at 250-1200[deg] C, and isolating the polycrystalline silicon from the gas phase. Process for producing polycrystalline silicon comprises conducting a gas forming chlorinated silane compound of formula (SiH xCl 4 - x) (I) by a microstructure apparatus or a micro gap and heated at 250-1200[deg] C, and isolating the polycrystalline silicon from the gas phase. x : 0-4. An independent claim is included for coating a carrier material with the silicon, comprising bringing the carrier material into the micro gap, conducting the at least one gas forming compound through the micro gap and heated at 250-1200[deg] C, and isolating the polycrystalline silicon from the gas phase on the carrier material.