首页> 外国专利> Preparing semiconductor particles, useful e.g. to prepare wafers, comprises thermally treating semiconductor raw material, where the formation of the particles takes place by directional solidification process, and surface treating

Preparing semiconductor particles, useful e.g. to prepare wafers, comprises thermally treating semiconductor raw material, where the formation of the particles takes place by directional solidification process, and surface treating

机译:制备有用的例如半导体颗粒。制备晶片的步骤包括对半导体原料进行热处理,在其中通过定向凝固工艺形成颗粒,以及进行表面处理

摘要

Preparation of semiconductor particles (50, 60), comprises (a) providing particular semiconductor raw material; (b) thermally treating the particular semiconductor raw material, where the formation of the semiconductor particles takes place by directional solidification process; and (c) surface treating the semiconductor particles. An independent claim is included for the semiconductor particles obtained by the above process, in which the excess impurities are disposed inhomogeneously and locally and/or separated in the surface volume of the semiconductor particle along transverse direction (56).
机译:制备半导体颗粒(50、60),包括(a)提供特定的半导体原料; (b)热处理特定的半导体原料,其中通过定向凝固工艺形成半导体颗粒; (c)对半导体粒子进行表面处理。对于通过上述方法获得的半导体颗粒包括独立的权利要求,其中多余的杂质沿横向方向(56)在半导体颗粒的表面体积中不均匀和局部地和/或分开地布置。

著录项

  • 公开/公告号DE102007061977A1

    专利类型

  • 公开/公告日2009-06-25

    原文格式PDF

  • 申请/专利权人 FUTECH GMBH;

    申请/专利号DE20071061977

  • 发明设计人 BUHRIG EBERHARD;JAEGER STEFFEN;

    申请日2007-12-21

  • 分类号C30B28/06;C30B29/06;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:25

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