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A method for a reduction of the insertion loss and provision of switch-off protection for mosfet - switch

机译:一种减少插入损耗并提供mosfet开关保护的方法

摘要

Switch, comprising:a first field effect transistor fet, with control electrode, sources electrode, drain electrode and potential trough, in which an input signal to the drain electrode or of the sources electrode and an output signal is received in each case to the sources electrode or drain electrode is given when the first fet is switched on;a first internal current connection bus;a second fet, which is arranged such that, when the first fet is switched off, a second fet is switched on, which the potential of the trough of the first fet with the first internal current connection bus couples;a third fet, of the internal current connection bus with a positive power supply when the input signal switches to l; anda fourth fet, of the internal current connection bus with the input signal when the positive power supply on l, wherein the potential of the trough of the first fet on the higher of the positive power supply or of the a - input signal is held.
机译:开关,包括:第一场效应晶体管FET,其具有控制电极,源电极,漏电极和电位槽,其中分别接收到漏电极或源电极的输入信号和输出信号至源极的输入信号当第一个FET接通时给出电极或漏电极;第一内部电流连接总线;第二个FET布置成使得当第一个FET断开时第二个FET接通,第二个FET的电位当输入信号切换为l时,第一脚的槽与第一内部电流连接总线的槽耦合;第三脚的内部电流连接总线为正电源。当正电源在l上时,内部电流连接总线的第四脚与输入信号一起被保持,其中,第一脚的低谷在正电源或a-输入信号中的较高者上的电位被保持。

著录项

  • 公开/公告号DE112007000404T5

    专利类型

  • 公开/公告日2009-04-23

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20071100404T

  • 发明设计人

    申请日2007-02-08

  • 分类号H03K17/06;H03K17/16;H03K17/687;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:23

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