reflective shift system, with a majority of the layers for applying a iii / v verbindungshalbleitermaterial

摘要

Thin film light emitting diodes - - chip of the a reflecting layer system for application to a iii / v - a compound semiconductor material (4), characterized by:a dielectric layer (1) on the iii / v - a compound semiconductor material (4), which contains phosphosilicate glass, anda layer (3), which contains a metal and, on the dielectric layer (1) is located.