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process for the production of a chalkogenid - halbleiterschicht abc2 type with optical process control

机译:光学过程控制的生产白垩质-halbleiterschicht abc2类型的方法

摘要

A method of monitoring the chalcogenation process in which the chalcogenide semiconductor layer is produced by initially sequentially depositing the two precursor layers of elements A and B and thereafter carrying out a chalcogenizing process with a simultaneous optical process control in which the layer sequence A B is irradiated by light from at least one coherent light source, the light diffusely scattered at the surface is detected and the scattered light signal measured as a function of time is evaluated such that characteristic changes in the layer developing during the chalcogenation are assigned to four characteristic points of the scattered light signal curve.
机译:一种监测硫族化合物形成过程的方法,其中硫族化物半导体层是通过首先依次沉积元素A和B的两个前体层,然后进行硫族化过程以及同时进行光学过程控制来进行的,其中通过照射层序AB至少一个相干光源发出的光,检测在表面上漫散射的光,并评估随时间测量的散射光信号,以便在硫属元素化过程中形成的层中的特征变化被分配给该装置的四个特征点散射光信号曲线。

著录项

  • 公开/公告号DE50212839D1

    专利类型

  • 公开/公告日2008-11-13

    原文格式PDF

  • 申请/专利号DE20025012839T

  • 发明设计人 SCHEER ROLAND;PIETZKER CHRISTIAN;

    申请日2002-04-04

  • 分类号H01L21/477;H01L21/66;C23C14/06;C23C16/52;C23C16/56;C30B25/10;G01R31/26;H01L21;H01L21/06;H01L21/16;H01L21/302;H01L21/461;H01L31/0296;H01L31/032;H01L31/18;H01L45;

  • 国家 DE

  • 入库时间 2022-08-21 19:08:36

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