AlxGa(1-x)As SUBSTRATE, EPITAXIAL WAFER FOR INFRARED LED, INFRARED LED, METHOD FOR PRODUCTION OF AlxGa(1-x)As SUBSTRATE, METHOD FOR PRODUCTION OF EPITAXIAL WAFER FOR INFRARED LED, AND METHOD FOR PRODUCTION OF INFRARED LED

摘要

PROBLEM TO BE SOLVED: To provide a method for production of an Al_xGa_(1-x)As (0x1) substrate which can keep its transmission property at a high level and enables the production of a device having excellent properties.;SOLUTION: The Al_xGa_(1-x)As substrate 10a is specifically disclosed as the Al_xGa_(1-x)As (0x1) substrate 10a which is characterized by comprising an Al_xGa_(1-x)As layer 11 having a main surface 11a and a rear surface 11b opposite to the main surface 11a, wherein the content x of Al in the rear surface 11b is higher than that in the main surface 11a in the Al_xGa_(1-x)As layer 11. The Al_xGa_(1-x)As substrate 10a may additionally comprise a GaAs substrate 13 which is arranged adjacent to the rear surface 11b of the Al_xGa_(1-x)As layer 11.;COPYRIGHT: (C)2011,JPO&INPIT