BI-LAYER, TRI-LAYER MASK CD CONTROL

摘要

PROBLEM TO BE SOLVED: To provide a method for controlling the critical dimension (CD) of etch features in an etching layer in a stack formed by a patterned photoresist mask, an intermediate mask layer disposed below the photoresist mask, a functionalized organic mask layer disposed below the intermediate mask layer, and an etching layer disposed below the functionalized organic mask layer.;SOLUTION: The intermediate mask layer 416 is opened by selectively etching the patterned photoresist mask 420. This opening operation in a functionalized organic mask layer 412 includes a step of flowing an opening gas containing COS, for generating plasma, and for stopping flowing the opening gas. Thereafter, the etching layer 408 is etched to a desired dimension.;COPYRIGHT: (C)2010,JPO&INPIT