METHOD OF MANUFACTURING CAPACITANCE TYPE SEMICONDUCTOR PHYSICAL QUANTITY SENSOR AND CAPACITANCE-TYPE SEMICONDUCTOR PHYSICAL QUANTITY SENSOR

摘要

PROBLEM TO BE SOLVED: To prevent troubles such as deposition without increasing manufacturing cost.;SOLUTION: After making the potential of a movable electrode 4 and the potential of a fixed electrode 5 the same by electrically connecting a through-hole conductor 6 and a through-hole conductor 7 with a potential equalization conductor 8, and performing anodic bonding, the movable electrode 4 and the fixed electrode 5 are cut off by cutting the equalization conductor 8 when pressure sensors are obtained by cutting a semiconductor wafer 1. As a result, an electrostatic attractive force is generated between the movable electrode 4 and the fixed electrode 5 by a voltage applied when the anodic bonding is performed, so that the troubles such as deposition are prevented. Moreover, the equalization conductor 8 is cut when the pressure sensors are obtained by cutting the semiconductor wafer 1, thereby the equalization conductor 8 can be cut without using any special device or process and without increasing the manufacturing cost.;COPYRIGHT: (C)2010,JPO&INPIT