METHOD AND SYSTEM FOR GENERAL MATCHING AND TUNING OF MODEL BASE

摘要

PPROBLEM TO BE SOLVED: To provide a method for tuning a lithography system so as to be capable of forming a different pattern image in a different lithography system employing a known process which does not necessitate the process of trial and error which is carried out so as to optimize the settings of a process and a lithography system for individual lithography systems. PSOLUTION: The method concerns matching and tuning of a general model base which functions with respect to an arbitrary pattern. Therefore, the necessity of CD (critical dimension) measurement or gauge selection is removed in this case. On the other hand, this method has versatility for combination with a specified conventional technology in order to achieve prominent performance with respect to a specific important pattern while achieving a general pattern application range at the same time. PCOPYRIGHT: (C)2010,JPO&INPIT