METHOD OF MANUFACTURING DIFFUSED WAFER, AND DIFFUSED WAFER

摘要

PPROBLEM TO BE SOLVED: To provide a method of manufacturing a diffused wafer for spin-etching a diffused wafer having a non-diffused layer and a diffused layer, thereby removing part of the non-diffused layer to make the thickness of the non-diffused layer almost uniform. PSOLUTION: The method includes the spin-etching step of removing the part 23 of the non-diffused layer 21 of the diffused wafer 20 having the non-diffused layer 21 and the diffused layer 22 by sheet spin-etching. The spin-etching step uses a spin-etching device movable in the in-plane direction D2 of the diffused wafer 20 and having a liquid supply port for supplying an etchant to the non-diffused layer 21 of the diffused wafer 20. The liquid supply port is positioned respectively on an in-plane peripheral part 20c and an in-plane central part 20d of the diffused wafer 20 to control the wafer in-plane distribution of an etched-off amount of the non-diffused layer 21 based on the thickness-oriented shape of the non-diffused layer 21 when performing the spin-etching. PCOPYRIGHT: (C)2010,JPO&INPIT