RAW POWDER FOR ION PLATING EVAPORATION SOURCE MATERIAL, ION PLATING EVAPORATION SOURCE MATERIAL AND METHOD FOR PRODUCING THE SAME, GAS BARRIER SHEET AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide raw powder for an ion plating evaporation source material capable of depositing a gas-barrier film wherein generation of defective films is suppressed, the stable film deposition is attained, and the high gas barrier property of silicon nitride is sufficiently exhibited, and to provide the ion plating evaporation source material suitable for the ion plating method, and a method for producing the same, and to provide a gas barrier sheet and a method for producing the same.;SOLUTION: The raw powder of the ion plating evaporation source material contains silicon nitride having the mean particle diameter of ≤5 μm and a melting type material having the mean particle diameter of ≤5 μm. The content of the melting type material is 5 to 50 pts.wt. based on 100 pts.wt. of silicon nitride.;COPYRIGHT: (C)2010,JPO&INPIT