SUBSTRATE FOR TEMPERATURE MEASUREMENTS AND METHOD FOR MEASURING HEAT TREATMENT TEMPERATURE

摘要

PROBLEM TO BE SOLVED: To provide a substrate for temperature measurements and a method for measuring a temperature for measuring the heat treatment temperature of 470-530°C.;SOLUTION: The substrate for temperature measurements is provided with a p-type silicon substrate to which phosphorus is implanted. The heat treatment temperature is measured from the layer resistance value of the p-type silicon substrate. The dose of phosphorus is 5×10¹⁴ to 1×10¹⁵ atom/cm².;COPYRIGHT: (C)2010,JPO&INPIT