METHOD OF MAKING UNIFORM DISTRIBUTION OF LAYER OF PREDETERMINED THICKNESS FORMED ON SILICON WAFER AND, AND METHOD OF MAKING UNIFORM DISTRIBUTION OF THICKNESS OF THE SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To make uniform a distribution of a layer (e.g., SOI layer) of a predetermined thickness formed on a surface of a silicon wafer.;SOLUTION: The method has an oxidization step of forming a natural oxide film on a surface of an SOI layer, and an etching step of removing the natural oxide film of the SOI layer formed in a local thickness part with use of an etching solution while leaving part (e.g., 1-2 ) of the thickness of the natural oxide film. Since a major surface of the SOI layer is converted to the natural oxide film, the natural oxide film can be easily etched with use of hydrofluoric acid. Since the etching can be locally carried out, a distribution of thickness of the SOI layer can be accurately made uniform by etching the thickness part of the SOI layer.;COPYRIGHT: (C)2010,JPO&INPIT