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MANUFACTURING METHOD OF INDIUM TIN OXIDE LAYER, AND MANUFACTURING METHOD OF ELECTRO-OPTICAL DEVICE

机译:氧化铟锡层的制造方法和光电装置的制造方法

摘要

PROBLEM TO BE SOLVED: To solve a problem that, when an ITO layer is used as a transparent electrode, there is a case wherein a foreign matter having conductivity is formed and if such foreign matter is generated, it penetrates through an organic light-emitting layer of a thickness of several tens of nm in the organic EL device, and makes electrical short circuit with a counter electrode to generate a region which is not displayed, and that in the region which is connected by a wiring with a location electrically short-circuited, a linear defect is generated by the voltage drop caused by electrical short circuit and becomes a factor to deteriorate the display quality.;SOLUTION: The ITO layer is washed by hot water having a temperature of 30°C or more and 60°C or less. The foreign matter produced secondarily at the time the ITO layer is formed has a different composition to the ITO, and contains an oxide of excessive tin, thereby it reacts with hot water and is separated from the ITO layer. On the other hand, the ITO layer has resistance to the hot water, thereby the foreign matter can be removed selectively.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:为了解决以下问题:当将ITO层用作透明电极时,存在形成具有导电性的异物并且如果产生该异物的情况,则该异物会透过有机发光体。在有机EL器件中形成一层厚度为几十纳米的层,并使其与对电极发生电短路,从而产生未显示的区域,并且该区域在通过布线连接的区域中具有电短路的位置,电路短路时,由电气短路引起的电压降会产生线性缺陷,并成为降低显示质量的一个因素。;解决方案:ITO层要用温度为30°C以上且60°C的热水洗涤或更少。形成ITO层时二次产生的异物具有与ITO不同的组成,并且包含过量的锡氧化物,因此它与热水反应并与ITO层分离。另一方面,ITO层对热水具有抵抗力,因此可以选择性地去除异物。;版权所有:(C)2010,JPO&INPIT

著录项

  • 公开/公告号JP2009295461A

    专利类型

  • 公开/公告日2009-12-17

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20080148928

  • 发明设计人 SERA HIROSHI;ITO ATSUSHI;

    申请日2008-06-06

  • 分类号H05B33/10;H01L51/50;H05B33/28;

  • 国家 JP

  • 入库时间 2022-08-21 19:01:58

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