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Roll-to-roll plasma-enhanced chemical vapor deposition of a barrier layer containing silicon and carbon
Roll-to-roll plasma-enhanced chemical vapor deposition of a barrier layer containing silicon and carbon
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机译:卷对卷等离子增强化学气相沉积的含硅和碳的阻挡层
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摘要
The present invention provides methods and processes for forming a barrier layer on the flexible substrate. Continuous roll-to-roll process may include using the at least one roller is configured to direct the substrate through the process chamber and process chamber to provide a substrate. By exposure to a plasma containing a carbon-containing precursor gases and silicon, at least a portion of the substrate in the process chamber, the process involves depositing in the vicinity of the substrate a barrier layer. The present invention, structural units SiC: Target further comprising a barrier layer based on H, a flexible substrate coated. The barrier layer has a low porosity and high density. Furthermore, the barrier layer, 10 -2 ~10 -3 g. shows the water vapor transmission rate (WVTR) low in the range of m -2 d -1, it is appropriate to use transmittance is very low.
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机译:本发明提供了用于在柔性基板上形成阻挡层的方法和工艺。连续的卷对卷过程可以包括使用至少一个辊,该至少一个辊被配置为引导衬底穿过处理室和处理室以提供衬底。通过在处理腔室中暴露于包含至少一部分衬底的含碳前驱物气体和硅的等离子体,该过程包括在衬底附近沉积阻挡层。本发明的结构单元SiC:靶还包括基于H的阻挡层,涂覆的柔性基板。阻挡层具有低孔隙率和高密度。此外,阻挡层为10 -2〜10 Sup> -3 g。表示水蒸气透过率(WVTR)在m -2 Sup> d -1的范围内较低,因此使用透射率非常低的情况是合适的。
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