首页> 外国专利> DENSE DIELECTRIC MATERIAL FOR HIGH FREQUENCY HAVING HIGH HEAT CONDUCTIVITY AND LOW DIELECTRIC LOSS, MANUFACTURING METHOD THEREOF AND MEMBER

DENSE DIELECTRIC MATERIAL FOR HIGH FREQUENCY HAVING HIGH HEAT CONDUCTIVITY AND LOW DIELECTRIC LOSS, MANUFACTURING METHOD THEREOF AND MEMBER

机译:具有高导热率和低介电损耗的高频密实介电材料及其制造方法和成员

摘要

PROBLEM TO BE SOLVED: To provide a low-loss, dense, dielectric material which has a low dielectric loss and high heat conductivity in a high-frequency region, a manufacturing method thereof, and a member thereof.;SOLUTION: The low-loss, dense, dielectric material for high frequency comprises a silicon nitride sintered compact essentially comprising silicon nitride and comprising an alkaline earth metal compound, a group 3a compound in the periodic table and impurity oxygen, provided that the grain boundaries in the sintered compact are crystallized. The dielectric material has a dielectric loss of ≤5×10-4 and a thermal conductivity of ≥50 W×m-1×K-1 in 2 GHz and 3 GHz and has a porosity of 3%. The manufacturing method thereof and the member thereof are also provided. The dense dielectric material for high frequency which has high heat conductivity and low dielectric loss and the member thereof provided here are used for an apparatus that generates plasma mainly by using high-frequency radiation such as microwave in an apparatus for manufacturing a semiconductor or a liquid crystal.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种在高频区域中具有低介电损耗和高导热率的低损耗,致密的介电材料,其制造方法及其构件。用于高频的致密的介电材料包括氮化硅烧结体,该烧结体主要包括氮化硅并且包括碱土金属化合物,元素周期表中的3a族化合物和杂质氧,条件是烧结体中的晶界被结晶。介电材料的介电损耗为5乘以10 -4 ,导热系数为50 W乘以m -1 乘以K -1 在2 GHz和3 GHz范围内,孔隙率<3%。还提供了其制造方法及其构件。这里提供的具有高导热率和低介电损耗的用于高频的致密介电材料及其部件被用于主要通过利用诸如微波的高频辐射在制造半导体或液体的设备中产生等离子体的设备。晶体;版权:(C)2010,JPO&INPIT

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