PROBLEM TO BE SOLVED: To provide a method of forming copper wiring for a semiconductor element by which the electrical characteristic and reliability of the semiconductor element can be improved by preventing the movement of copper atoms in copper wiring by increasing interfacial bondability between a copper-diffusion preventing insulating film and its underlying layer.;SOLUTION: The method of forming copper wiring includes a step of forming a first interlayer insulating film and a polishing stopping layer on a substrate, a step of forming a damascene pattern by etching the polishing stopping layer and the first interlayer insulating film, and a step of forming a copper-diffusion preventing insulating film and a copper layer on the polishing stopping layer including the damascene pattern. The method also includes a step of forming copper wiring in the damascene pattern, a step of forming a metal element doped layer on the surface of the whole structure including the copper wiring, and a step of forming a copper-diffusion preventing insulating film and a second interlayer insulating film on the whole structure on which the metal element doped layer is formed, a copper alloy layer and a metal oxide layer in the interface between the copper wiring and the copper-diffusion preventing insulating film by utilizing heat generated at the time of vapor depositing the insulating films, and a metal oxide layer in the interface between the peripheral layer of the copper wiring and the copper-diffusion preventing insulating film.;COPYRIGHT: (C)2005,JPO&NCIPI
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