LASER CRYSTALLIZATION DEVICE, MASK, LASER CRYSTALLIZATION METHOD, CRYSTAL MATERIAL, AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain crystal of high quality in which in-grain defect is suppressed.;SOLUTION: A projection mask 15 includes a block B1 for forming a first irradiation pattern by irradiation with laser beam through a first slit pattern 15-1, a block B2 for forming a second irradiation pattern which is parallel to the first irradiation pattern and overlaps with a part of an end of the first irradiation pattern by irradiation through a second slit pattern 15-2, a block B3 for forming a third irradiation pattern orthogonal to the first irradiation pattern and second irradiation pattern by irradiation through a third slit pattern 15-3, a block B4 for forming a fourth irradiation pattern parallel to the first irradiation pattern by irradiation through a fourth slit pattern 15-4. A seed crystal area of single crystal is formed by irradiation with third laser beam in an overlap area of the first irradiation pattern, second irradiation pattern, and third irradiation pattern, and then the fourth irradiation pattern overlaps with a part of the seed crystal area.;COPYRIGHT: (C)2010,JPO&INPIT