The detection by the compensation of the selected state programs and individual size margin improvement in the read operation of the non-volatile memory

摘要

Non-volatile memory read operations compensate for floating gate coupling when there is a possibility that the apparent threshold voltage of the memory cell is shifted. A memory cell of interest can be read using a reference value based on the level of charge read from a neighboring memory cell. The misreading of an adjacent cell, the programming methodologies, and in particular, there is a possibility that when reading the neighboring cell charge levels, provides greater impact or a particular state in the methodology of these may be further specified. In one embodiment, the memory cell is programmed to state between specific misreading of the adjacent cell is more hindrance, to create a wider margin. In one embodiment, rather than when reading the reference level of the other of the reference level such as in the case of wider margin has been created, when reading the reference level of a particular memory cell is floating on the basis of the state of the neighboring cells further is read by compensating the gate coupling.