Method and system for optimizing the number of word line segments in the MRAM array is segmented.

摘要

Method and the system and reads out magnetic memory method and the system which are written to magnetic memory are disclosed. Magnetic memory includes with the plural magnetic storage cells which correspond to each of the plural selective possible word line segments and each word line segment. Method and the system include the fact that it reads out the plural magnetic storage cells which correspond to the word line segment in order to decide the state of each magnetic storage cell. In one feature, in addition as for method and the system, during entry operating during the read-out operation which is formed the fact that at least one storage unit is utilized in order to remember each state of the plural magnetic storage cells which are decided is included. In addition method and the system, it reads out and it includes also the fact that the data is written to portion of the plural magnetic cells which correspond to the word line segment afterwards. In addition as for method and the system, when the part of the plural magnetic cells is written, substantially simultaneously, state also the fact that it re-writes in is included in remaining each of the plural magnetic storage cells which correspond to the word line segment.