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The high tension side power supply voltage supply line which the rise

机译:上升的高压侧电源电压供给线

摘要

In the level shift circuit 2, with the high tension side power source line and the entry edge n voltage BOOT is supplied of the inverter circuit where which consists of PMOS transistor Q1 and NMOS transistor Q2, the NMOS transistor Q5 where the gate and the source short is provided, low with the voltage where voltage SW is supplied side power source line and the entry edge n of the inverter circuit which consists of PMOS transistor Q1 and NMOS transistor Q2, the NMOS transistor Q6 where the gate and the source short is provided, the lead of the voltage waveform of the entry edge n is held down with the body diode of NMOS transistor Q5 and Q6. Because of this, it can suppress the malfunction of the level shift circuit.
机译:在电平移位电路2中,利用由PMOS晶体管Q1和NMOS晶体管Q2构成的逆变器电路,由栅极和源极构成的NMOS晶体管Q5,向高压侧电源线和进入边缘提供n电压BOOT。短路,由电源侧电源线提供的电压低,由PMOS晶体管Q1和NMOS晶体管Q2构成的逆变器电路的输入端n,设置有栅极和源极短路的NMOS晶体管Q6然后,利用NMOS晶体管Q5和Q6的体二极管将进入边缘n的电压波形的前导压低。因此,可以抑制电平移位电路的故障。

著录项

  • 公开/公告号JP4514753B2

    专利类型

  • 公开/公告日2010-07-28

    原文格式PDF

  • 申请/专利权人 ローム株式会社;

    申请/专利号JP20060514436

  • 发明设计人 酒井 優;

    申请日2005-05-19

  • 分类号H02M3/155;H02M1/08;

  • 国家 JP

  • 入库时间 2022-08-21 18:59:08

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