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Observation method and the observation system by processing method and its processing system and charged beam by the charged beam

机译:观察方法及其处理系统的观察方法及其处理系统和带电束的带电束

摘要

PROBLEM TO BE SOLVED: To enable analysis of improper analyses, maintenance, specification assessment through a microscopic machining at high accuracy. By specifying an irradiating region for charged beam based upon a relating distance between a standard mark measured at an optical measuring step and charged beam, and by performing micro machining in a high precision by having a specified irritating region irradiated with a charged beam machining to. SOLUTION: Making and measuring device for a standard mark consist is of an XYZθ table 26 on which a semiconductor device 100 is mounted, an applying device 230 which applies a trace liquid material 10 to a local part on a surface of the semiconductor device 100, and a heating means 220 which is hardened with the trace material 10 applied by the applying device 230 through heating. Next a two dimensional distance between a microscopic standard mark 11 and a portion 1 to be machined based upon an optical image which is observed or detected is calculated, and additionally a pipette 21, as an applying device 230 or a position alignment mark which is formed at a positioning pin terminal and on the surface of the semiconductor device 100, is detected. Furthermore, these are controlled by an using optical microscope 210 and a controller 210.
机译:要解决的问题:通过微观加工以高精度进行不正确的分析,维护和规格评估。通过基于在光学测量步骤中测量的标准标记与带电束之间的相关距离来指定带电束的照射区域,并且通过对带电束进行加工而对指定的照射区域进行照射,从而以高精度进行微加工。解决方案:标准标记组成的制造和测量设备是XYZθ。在其上安装有半导体装置100的工作台26,将痕量液体材料10施加到半导体装置100的表面上的局部的施加装置230,以及由通过施加的痕量材料10硬化的加热装置220。通过加热施加装置230。接下来,计算基于观察或检测到的光学图像的微观标准标记11和要加工的部分1之间的二维距离,另外,作为形成装置230或形成的位置对准标记的移液管21在定位销端子处并且在半导体器件100的表面上检测到“电阻”。此外,这些由使用光学显微镜210和控制器210控制。

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