Low defect density silicon having a vacancy dominated core substantially free of oxidation induced stacking faults

摘要

Method of manufacturing a single crystal silicon ingot, the invention relates to a wafer or ingot and obtained by the method. By controlling the cooling rate of the crystal to about 750 ℃ (i) the growth rate v, and (ii) an average axial temperature gradient G _0, from (iii) solidification temperature, this method is radially inward from the side surface extends into the axially symmetric region of the first silicon interstitials are the predominant intrinsic point defect, and the axially symmetric region extending second radially inward to the central axis of the ingot from the axially symmetric region of the first It comprises that give rise to a segment having. By controlling v, the cooling rate and G _0, while causing the agglomerated intrinsic point defects in the first region, is subjected to wafer oxidation process suitable for the formation of such defects, the method, cooling otherwise and characterized in that it restricts that the oxidation-induced stacking faults occur in a wafer obtained from the segment by controlling the speed further.