In order that it is provided on the shirikonchitsu conversion film and the said shirikonchitsu conversion film which

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device and its manufacturing method that use a ZnO-family compound semiconductor, are a vertical type that can take out an electrode from the upper and lower surfaces of a chip, having superior crystallinity of a semiconductor layer and high light emission efficiency, at the same time, which do not use a sapphire substrate, and are convenient in a manufacturing process and use. ;SOLUTION: A silicon nitride film 2 is provided on the surface of a silicon substrate 1, at least n-type and p-type layers 3 and 4 and 6 and 7 consisting of a ZnO-family compound semiconductor are provided on the silicon nitride film 2, and a semiconductor lamination part 11 is laminated, so that a light emission layer is formed. The silicon nitride film 2 is preferably subjected to heat treatment under atmosphere, where nitrogen as an ammonia gas exists for forming.;COPYRIGHT: (C)2001,JPO