首页> 外国专利> Apparatus amp; method for ion beam implantation using scanning and spot beams with improved high dose beam quality

Apparatus amp; method for ion beam implantation using scanning and spot beams with improved high dose beam quality

机译:使用具有改善的高剂量束质量的扫描束和点束进行离子束注入的设备和方法

摘要

An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is built in.
机译:公开了具有多种操作模式的离子注入设备。离子注入装置具有离子源和用于从其在AMU非分散平面上形成会聚束的离子提取装置。离子注入设备包括在磁性分析仪之前的磁性扫描仪,该磁性分析仪用于在非分散平面上扫描束,该磁性分析仪用于选择具有特定质荷比的离子以穿过质量狭缝以投射到基板上。提供矩形四重磁体以准直扫描的离子束,并精确校正离子束入射角度到目标上。包含能量过滤的减速或加速系统位于光束准直仪的下游。公开了一种用于扫描目标的二维机械扫描系统,其中内置有束诊断装置。

著录项

  • 公开/公告号US2010237232A1

    专利类型

  • 公开/公告日2010-09-23

    原文格式PDF

  • 申请/专利权人 JIONG CHEN;

    申请/专利号US20100661522

  • 发明设计人 JIONG CHEN;

    申请日2010-03-18

  • 分类号H01J37/317;H01J49/26;H01J37/147;

  • 国家 US

  • 入库时间 2022-08-21 18:55:19

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