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Trigate static random-access memory with independent source and drain engineering, and devices made therefrom
Trigate static random-access memory with independent source and drain engineering, and devices made therefrom
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机译:具有独立的源极和漏极工程技术的Trigate静态随机存取存储器及其制造的设备
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摘要
A static random-access memory circuit includes at least one access device including source and drain sections for a pass region, at least one pull-up device and at least one pull-down device including source-and-drain sections for a pull-down region. The static random-access memory circuit is configured with external resistivity (Rext) for the pull-down region to be lower than Rext for the pass region. Processes of achieving the static random-access memory circuit include source-and-drain epitaxy.
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