Trigate static random-access memory with independent source and drain engineering, and devices made therefrom

摘要

A static random-access memory circuit includes at least one access device including source and drain sections for a pass region, at least one pull-up device and at least one pull-down device including source-and-drain sections for a pull-down region. The static random-access memory circuit is configured with external resistivity (R_ext) for the pull-down region to be lower than R_ext for the pass region. Processes of achieving the static random-access memory circuit include source-and-drain epitaxy.